| Characterization Services Modelithics has an extensive array of test equipment and expertise to guarantee complete and accurate testing of a wide variety of RF/microwave parameters. Despite our excellent equipment inventory, our most valuable assets are the discipline and professionalism we demonstrate in precise measurement and careful documentation. Click to download the full Characterization Services Brochure (PDF-790 kB) |
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| Wafer-Probe and other Configurations Modelithics emphasizes wafer probe measurements of semiconductor wafers and chips, as well as surface-mount components assembled on hybrid boards. Other configurations include microstrip and coplanar test fixtures, and RF measurements to coaxial or waveguide reference planes. S-Parameter Measurements Multiple vector network analyzer (VNA) test platforms cover the following frequency bands: |
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| 30
kHz to 6 GHz |
HP
8753 |
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| 0.045
to 50 GHz |
HP
8510C |
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| 0.040
to 40 GHz |
Anritsu
Lightning |
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| 0.040
to 65 GHz |
Anritsu
Lightning |
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|   65-110
GHz |
Anritsu
Wiltron 360/Oleson MM-wave Extension Modules |
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| True 4-port S-parameter measurements through 26 GHz are available to support mixed-mode circuit design applications. |
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| Noise Measurements |
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| Noise measurements are performed in a screen room to minimize local electromagnetic interface. |
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| Flicker (1/f) Noise |
10Hz to 100kHz (extension to 1 MHz available) |
Custom test setup |
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| 50 ohm Noise Figure |
10 MHz to 26 GHz |
HP8970/HP8971 |
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| Noise Parameters (NFmin, Rn, Gopt) |
2 to 26
GHz |
Maury ATN NP5 |
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| Noise Parameters (NFmin, Rn, Gopt) |
0.3 to 6 GHz |
Maury ATN NP5 |
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|   | Other Bands |
Contact Modelithics |
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| *Advanced development capability used less frequently than the below 26 GHz noise parameter systems. Basic measurements include the standard noise parameters Fmin, Gamma-opt, Rn | |||
Load-
and Source-Pull Measurements Load- and source-pull measurements can be performed to generate impedance contours for optimizing the tradeoff between various amplifier performance parameters, such as output power and 1 dB compression, power-added-efficiency (PAE), transducer gain, and third-order-intermodulation distortion (IM3 or TOI).
DC
and Pulsed IV For transistor and diode characterization modeling, DC and pulsed measurements are made using the following equipment:
Other Instrumentation and Software Many other measurements and software tools are available to help support model development requirements, including:
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Load-
and Source-Pull Measurements
DC
and Pulsed IV